HCFL60R350 MOSFET Datasheet: N-Ch, 600V, 11.1A. Full specification with pinout and replacement list

HCFL60R350 Specs and Replacement

Type Designator: HCFL60R350

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm

Package: DFN8X8

HCFL60R350 substitution

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HCFL60R350 datasheet

..1. Size:433K semihow
hcfl60r350.pdf pdf_icon

May 2020 HCFL60R350 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 11.1 A Excellent stability and uniformity RDS(on), max 0.385 100% Avalanche Tested Built-in ESD Diode Qg, Typ 22.6 nC Application Package & Internal Circuit DFN8x8 SYMBOL ... See More ⇒

7.1. Size:433K semihow
hcfl60r150.pdf pdf_icon

May 2020 HCFL60R150 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 21.7 A Excellent stability and uniformity RDS(on), max 0.165 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit DFN8x8 SYMBOL Sw... See More ⇒

7.2. Size:434K semihow
hcfl60r115.pdf pdf_icon

May 2020 HCFL60R115 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 26.9 A Excellent stability and uniformity RDS(on), max 127 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi... See More ⇒

7.3. Size:413K semihow
hcfl60r290.pdf pdf_icon

May 2020 HCFL60R290 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 13.1 A Excellent stability and uniformity RDS(on), max 0.32 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi... See More ⇒