All MOSFET. HCFL70R360 Datasheet

 

HCFL70R360 Datasheet and Replacement


   Type Designator: HCFL70R360
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.396 Ohm
   Package: DFN8X8
 

 HCFL70R360 substitution

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HCFL70R360 Datasheet (PDF)

 ..1. Size:413K  semihow
 hcfl70r360.pdf pdf_icon

HCFL70R360

May 2020HCFL70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 11.7 A Excellent stability and uniformityRDS(on), max 0.396 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Sw

 7.1. Size:433K  semihow
 hcfl70r180.pdf pdf_icon

HCFL70R360

May 2020HCFL70R180700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 19.8 A Excellent stability and uniformityRDS(on), max 0.198 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Sw

Datasheet: HCFL60R190 , HCFL60R290 , HCFL60R350 , HCFL65R130 , HCFL65R210 , HCFL65R380 , HCFL65R550 , HCFL70R180 , IRFP064N , HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 , HCI70R360 , HCI70R600 , HCP60R099 , HCP65R110 .

History: STT2604 | IRFR3709ZT | WMO240N10LG2

Keywords - HCFL70R360 MOSFET datasheet

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