HCFL70R360 MOSFET Datasheet: N-Ch, 700V, 11.7A. Full specification with pinout and replacement list

HCFL70R360 Specs and Replacement

Type Designator: HCFL70R360

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.396 Ohm

Package: DFN8X8

HCFL70R360 substitution

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HCFL70R360 datasheet

..1. Size:413K semihow
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May 2020 HCFL70R360 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 11.7 A Excellent stability and uniformity RDS(on), max 0.396 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit DFN8x8 SYMBOL Sw... See More ⇒

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hcfl70r180.pdf pdf_icon

May 2020 HCFL70R180 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 19.8 A Excellent stability and uniformity RDS(on), max 0.198 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit DFN8x8 SYMBOL Sw... See More ⇒

Detailed specifications: HCFL60R190, HCFL60R290, HCFL60R350, HCFL65R130, HCFL65R210, HCFL65R380, HCFL65R550, HCFL70R180, AO4468, HCFL80R250, HCFL80R380, HCI60R150, HCI70R230, HCI70R360, HCI70R600, HCP60R099, HCP65R110