HCFL80R380 Specs and Replacement
Type Designator: HCFL80R380
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 26 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: DFN8X8
HCFL80R380 substitution
- MOSFET ⓘ Cross-Reference Search
HCFL80R380 datasheet
hcfl80r380.pdf
June 2021 HCFL80R380 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 13 A Excellent stability and uniformity RDS(on), max 0.42 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swit... See More ⇒
Detailed specifications: HCFL60R350, HCFL65R130, HCFL65R210, HCFL65R380, HCFL65R550, HCFL70R180, HCFL70R360, HCFL80R250, IRFZ44N, HCI60R150, HCI70R230, HCI70R360, HCI70R600, HCP60R099, HCP65R110, HCP65R130, HCP65R165
Keywords - HCFL80R380 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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