HCI70R360 Datasheet and Replacement
Type Designator: HCI70R360
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO262
HCI70R360 substitution
HCI70R360 Datasheet (PDF)
hci70r360.pdf

June 2020HCI70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 11.6 A Excellent stability and uniformityRDS(on), max 0.36 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-262 SYMBOL Swi
hci70r600.pdf

July 2021HCI70R600700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 7.3 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitTO-262 SYMBOL Switc
hci70r230.pdf

June 2020HCI70R230700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 16.0 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-262 SYMBOL Swi
Datasheet: HCFL65R380 , HCFL65R550 , HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 , IRF840 , HCI70R600 , HCP60R099 , HCP65R110 , HCP65R130 , HCP65R165 , HCP65R210 , HCP65R320 , HCP90R300 .
Keywords - HCI70R360 MOSFET datasheet
HCI70R360 cross reference
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History: SI4838DY | KI2303



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