HCI70R360 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCI70R360
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 11.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO262
HCI70R360 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCI70R360 Datasheet (PDF)
hci70r360.pdf
June 2020HCI70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 11.6 A Excellent stability and uniformityRDS(on), max 0.36 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-262 SYMBOL Swi
hci70r600.pdf
July 2021HCI70R600700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 7.3 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitTO-262 SYMBOL Switc
hci70r230.pdf
June 2020HCI70R230700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 16.0 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-262 SYMBOL Swi
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
