HCI70R360 - аналоги, параметры транзистора - Справочник транзисторов

HCI70R360 даташит

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June 2020 HCI70R360 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 11.6 A Excellent stability and uniformity RDS(on), max 0.36 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit TO-262 SYMBOL Swi

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July 2021 HCI70R600 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 7.3 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit TO-262 SYMBOL Switc

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June 2020 HCI70R230 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 16.0 A Excellent stability and uniformity RDS(on), max 0.23 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit TO-262 SYMBOL Swi

Другие MOSFET... HCFL65R380 , HCFL65R550 , HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 , IRF840 , HCI70R600 , HCP60R099 , HCP65R110 , HCP65R130 , HCP65R165 , HCP65R210 , HCP65R320 , HCP90R300 .