HCP60R099 Datasheet. Specs and Replacement

Type Designator: HCP60R099  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO220

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HCP60R099 datasheet

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HCP60R099

Dec 2019 HCP60R099 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 30.7 A Excellent stability and uniformity RDS(on), max 99 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 75 nC Application Package & Internal Circuit TO-220 SYMBOL Switc... See More ⇒

Detailed specifications: HCFL70R180, HCFL70R360, HCFL80R250, HCFL80R380, HCI60R150, HCI70R230, HCI70R360, HCI70R600, IRF540N, HCP65R110, HCP65R130, HCP65R165, HCP65R210, HCP65R320, HCP90R300, HCP90R450, HCP90R800

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