All MOSFET. HCP60R099 Datasheet

 

HCP60R099 Datasheet and Replacement


   Type Designator: HCP60R099
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220
 

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HCP60R099 Datasheet (PDF)

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HCP60R099

Dec 2019HCP60R099600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Switc

Datasheet: HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 , HCI70R230 , HCI70R360 , HCI70R600 , IRF540 , HCP65R110 , HCP65R130 , HCP65R165 , HCP65R210 , HCP65R320 , HCP90R300 , HCP90R450 , HCP90R800 .

History: OSG65R080PT3ZF | NIMD6001 | OSG65R125PZF

Keywords - HCP60R099 MOSFET datasheet

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