All MOSFET. HCP65R320 Datasheet

 

HCP65R320 Datasheet and Replacement


   Type Designator: HCP65R320
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO220
 

 HCP65R320 substitution

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HCP65R320 Datasheet (PDF)

 ..1. Size:390K  semihow
 hcp65r320.pdf pdf_icon

HCP65R320

June 2021HCP65R320650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 12.3 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi

 8.1. Size:358K  semihow
 hcp65r165.pdf pdf_icon

HCP65R320

Dec 2019HCP65R165650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi

 8.2. Size:358K  semihow
 hcp65r110.pdf pdf_icon

HCP65R320

Dec 2019HCP65R110650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 29.1 A Excellent stability and uniformityRDS(on), max 110 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit

 8.3. Size:631K  semihow
 hcp65r210.pdf pdf_icon

HCP65R320

Nov 2020HCP65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit

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Datasheet: HCI70R230 , HCI70R360 , HCI70R600 , HCP60R099 , HCP65R110 , HCP65R130 , HCP65R165 , HCP65R210 , IRFP460 , HCP90R300 , HCP90R450 , HCP90R800 , HCS60R099 , HCS60R099ST , HCS60R150ST , HCS60R260S , HCS60R260ST .

History: PK6B0SA | IXFT30N40Q | IXTT10N100D2 | CES2313 | PM5Q2EA | PKCD0BB | SWK083R06VSM

Keywords - HCP65R320 MOSFET datasheet

 HCP65R320 cross reference
 HCP65R320 equivalent finder
 HCP65R320 lookup
 HCP65R320 substitution
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