HCP65R320 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HCP65R320
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 106 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 12.3 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 28 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.32 Ohm
Тип корпуса: TO220
HCP65R320 Datasheet (PDF)
hcp65r320.pdf
June 2021HCP65R320650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 12.3 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
hcp65r165.pdf
Dec 2019HCP65R165650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi
hcp65r110.pdf
Dec 2019HCP65R110650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 29.1 A Excellent stability and uniformityRDS(on), max 110 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit
hcp65r210.pdf
Nov 2020HCP65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit
hcp65r130.pdf
Dec 2019HCP65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25 A Excellent stability and uniformityRDS(on), max 130 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Switch
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