All MOSFET. HCP90R450 Datasheet

 

HCP90R450 Datasheet and Replacement


   Type Designator: HCP90R450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 22.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220
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HCP90R450 Datasheet (PDF)

 ..1. Size:375K  semihow
 hcp90r450.pdf pdf_icon

HCP90R450

Jun. 2023HCP90R450900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi

 8.1. Size:375K  semihow
 hcp90r300.pdf pdf_icon

HCP90R450

Jun. 2023HCP90R300900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 14.5 A Excellent stability and uniformityRDS(on), max 0.3 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swit

 8.2. Size:376K  semihow
 hcp90r800.pdf pdf_icon

HCP90R450

Jun. 2023HCP90R800900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitTO-220 SYMBOL Swi

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History: DMP2104LP | RTF020P02TL | IRFBG20 | DMN2300UFB4 | TK2P60D | DMN60H3D5SK3

Keywords - HCP90R450 MOSFET datasheet

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