HCP90R800 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCP90R800
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.4 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
HCP90R800 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCP90R800 Datasheet (PDF)
hcp90r800.pdf
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hcp90r450.pdf
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hcp90r300.pdf
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