HCP90R800 Datasheet. Specs and Replacement
Type Designator: HCP90R800 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
HCP90R800 substitution
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HCP90R800 datasheet
hcp90r800.pdf
Jun. 2023 HCP90R800 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit TO-220 SYMBOL Swi... See More ⇒
hcp90r450.pdf
Jun. 2023 HCP90R450 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit TO-220 SYMBOL Swi... See More ⇒
hcp90r300.pdf
Jun. 2023 HCP90R300 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 14.5 A Excellent stability and uniformity RDS(on), max 0.3 100% Avalanche Tested Built-in ESD Diode Qg, Typ 43 nC Application Package & Internal Circuit TO-220 SYMBOL Swit... See More ⇒
Detailed specifications: HCP60R099, HCP65R110, HCP65R130, HCP65R165, HCP65R210, HCP65R320, HCP90R300, HCP90R450, IRFB4110, HCS60R099, HCS60R099ST, HCS60R150ST, HCS60R260S, HCS60R260ST, HCS60R900S, HCS65R165ST, HCS65R210ST
Keywords - HCP90R800 MOSFET specs
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