All MOSFET. HCS60R099ST Datasheet

 

HCS60R099ST Datasheet and Replacement


   Type Designator: HCS60R099ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220FT
      - MOSFET Cross-Reference Search

 

HCS60R099ST Datasheet (PDF)

 ..1. Size:370K  semihow
 hcs60r099st.pdf pdf_icon

HCS60R099ST

Dec 2019HCS60R099ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 5.1. Size:364K  semihow
 hcs60r099.pdf pdf_icon

HCS60R099ST

Dec 2019HCS60R099600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220F SYMBOL Swit

 8.1. Size:401K  semihow
 hcs60r260s.pdf pdf_icon

HCS60R099ST

Sep 2020HCS60R260S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.2. Size:421K  semihow
 hcs60r150st.pdf pdf_icon

HCS60R099ST

April 2020HCS60R150ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.4 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

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