All MOSFET. HCS60R260ST Datasheet

 

HCS60R260ST Datasheet and Replacement


   Type Designator: HCS60R260ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO220FT
 

 HCS60R260ST substitution

   - MOSFET ⓘ Cross-Reference Search

 

HCS60R260ST Datasheet (PDF)

 ..1. Size:402K  semihow
 hcs60r260st.pdf pdf_icon

HCS60R260ST

Sep 2020HCS60R260ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 4.1. Size:401K  semihow
 hcs60r260s.pdf pdf_icon

HCS60R260ST

Sep 2020HCS60R260S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.1. Size:421K  semihow
 hcs60r150st.pdf pdf_icon

HCS60R260ST

April 2020HCS60R150ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.4 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.2. Size:364K  semihow
 hcs60r099.pdf pdf_icon

HCS60R260ST

Dec 2019HCS60R099600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220F SYMBOL Swit

SHOW MORE

Datasheet: HCP65R320 , HCP90R300 , HCP90R450 , HCP90R800 , HCS60R099 , HCS60R099ST , HCS60R150ST , HCS60R260S , P55NF06 , HCS60R900S , HCS65R165ST , HCS65R210ST , HCS65R450S , HCS65R450ST , HCS65R830ST , HCS70R180S , HCS70R230S .

History: SI2334DS | RJL6018DPK | 2SK2360 | SI4800 | BUK954R2-55B | HM2309B | RJK1211DNS

Keywords - HCS60R260ST MOSFET datasheet

 HCS60R260ST cross reference
 HCS60R260ST equivalent finder
 HCS60R260ST lookup
 HCS60R260ST substitution
 HCS60R260ST replacement

 

 
Back to Top

 


 
.