HCS65R210ST Datasheet. Specs and Replacement
Type Designator: HCS65R210ST 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 39 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO220FT
HCS65R210ST substitution
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HCS65R210ST datasheet
hcs65r210st.pdf
June 2019 HCS65R210ST 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 16.8 A Excellent stability and uniformity RDS(on), max 0.21 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit TO-220FT SYMBOL ... See More ⇒
hcs65r450st.pdf
Sep 2020 HCS65R450ST 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 9.2 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 20 nC Application Package & Internal Circuit TO-220FT SYMBOL S... See More ⇒
hcs65r165st.pdf
Dec 2019 HCS65R165ST 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 20.4 A Excellent stability and uniformity RDS(on), max 0.165 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-220FT SYMBOL ... See More ⇒
Detailed specifications: HCP90R800, HCS60R099, HCS60R099ST, HCS60R150ST, HCS60R260S, HCS60R260ST, HCS60R900S, HCS65R165ST, IRFB4115, HCS65R450S, HCS65R450ST, HCS65R830ST, HCS70R180S, HCS70R230S, HCS70R600ST, HCS70R710ST, HCS70R910ST
Keywords - HCS65R210ST MOSFET specs
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