All MOSFET. HCS65R210ST Datasheet

 

HCS65R210ST Datasheet and Replacement


   Type Designator: HCS65R210ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO220FT
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HCS65R210ST Datasheet (PDF)

 ..1. Size:422K  semihow
 hcs65r210st.pdf pdf_icon

HCS65R210ST

June 2019HCS65R210ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.1. Size:421K  semihow
 hcs65r450st.pdf pdf_icon

HCS65R210ST

Sep 2020HCS65R450ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 8.2. Size:425K  semihow
 hcs65r830st.pdf pdf_icon

HCS65R210ST

Jan. 2021HCS65R830ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 0.83 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.3. Size:372K  semihow
 hcs65r165st.pdf pdf_icon

HCS65R210ST

Dec 2019HCS65R165ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

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History: VBNC1303

Keywords - HCS65R210ST MOSFET datasheet

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