HCS70R180S Datasheet. Specs and Replacement
Type Designator: HCS70R180S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220FS
HCS70R180S substitution
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HCS70R180S datasheet
hcs70r180s.pdf
Dec 2019 HCS70R180S 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 19.5 A Excellent stability and uniformity RDS(on), max 0.18 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-220FS SYMBOL S... See More ⇒
hcs70r600st.pdf
Sep 2020 HCS70R600ST 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 7.3 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit TO-220FT SYMBOL Sw... See More ⇒
hcs70r230s.pdf
June 2019 HCS70R230S 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 16.0 A Excellent stability and uniformity RDS(on), max 0.23 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit TO-220FS SYMBOL ... See More ⇒
Detailed specifications: HCS60R260S, HCS60R260ST, HCS60R900S, HCS65R165ST, HCS65R210ST, HCS65R450S, HCS65R450ST, HCS65R830ST, 7N65, HCS70R230S, HCS70R600ST, HCS70R710ST, HCS70R910ST, HCS80R1K2S, HCS80R1K2ST, HCS80R1K4S, HCS80R1K4ST
Keywords - HCS70R180S MOSFET specs
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