HCS70R910ST Datasheet. Specs and Replacement

Type Designator: HCS70R910ST  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.91 Ohm

Package: TO220FT

HCS70R910ST substitution

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HCS70R910ST datasheet

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HCS70R910ST

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HCS70R910ST

Sep 2020 HCS70R600ST 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 7.3 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit TO-220FT SYMBOL Sw... See More ⇒

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 hcs70r180s.pdf pdf_icon

HCS70R910ST

Dec 2019 HCS70R180S 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 19.5 A Excellent stability and uniformity RDS(on), max 0.18 100% Avalanche Tested Built-in ESD Diode Qg, Typ 50 nC Application Package & Internal Circuit TO-220FS SYMBOL S... See More ⇒

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HCS70R910ST

June 2019 HCS70R230S 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 16.0 A Excellent stability and uniformity RDS(on), max 0.23 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit TO-220FS SYMBOL ... See More ⇒

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Detailed specifications: HCS65R210ST, HCS65R450S, HCS65R450ST, HCS65R830ST, HCS70R180S, HCS70R230S, HCS70R600ST, HCS70R710ST, AON7408, HCS80R1K2S, HCS80R1K2ST, HCS80R1K4S, HCS80R1K4ST, HCS90R1K0S, HCS90R1K6S, HCS90R300S, HCS90R450S

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