All MOSFET. HCS70R910ST Datasheet

 

HCS70R910ST Datasheet and Replacement


   Type Designator: HCS70R910ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.91 Ohm
   Package: TO220FT
 

 HCS70R910ST substitution

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HCS70R910ST Datasheet (PDF)

 ..1. Size:421K  semihow
 hcs70r910st.pdf pdf_icon

HCS70R910ST

March 2020HCS70R910ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.91 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.1. Size:423K  semihow
 hcs70r600st.pdf pdf_icon

HCS70R910ST

Sep 2020HCS70R600ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 7.3 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL Sw

 8.2. Size:370K  semihow
 hcs70r180s.pdf pdf_icon

HCS70R910ST

Dec 2019HCS70R180S700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 19.5 A Excellent stability and uniformityRDS(on), max 0.18 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.3. Size:368K  semihow
 hcs70r230s.pdf pdf_icon

HCS70R910ST

June 2019HCS70R230S700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 16.0 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

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Datasheet: HCS65R210ST , HCS65R450S , HCS65R450ST , HCS65R830ST , HCS70R180S , HCS70R230S , HCS70R600ST , HCS70R710ST , 2N7000 , HCS80R1K2S , HCS80R1K2ST , HCS80R1K4S , HCS80R1K4ST , HCS90R1K0S , HCS90R1K6S , HCS90R300S , HCS90R450S .

History: HFD5N60U | 2SK578 | 7N60G-TF3T-T | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I

Keywords - HCS70R910ST MOSFET datasheet

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