All MOSFET. HCS80R1K2ST Datasheet

 

HCS80R1K2ST MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCS80R1K2ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.3 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220FT

 HCS80R1K2ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCS80R1K2ST Datasheet (PDF)

 ..1. Size:399K  semihow
 hcs80r1k2st.pdf

HCS80R1K2ST HCS80R1K2ST

Sep 2020HCS80R1K2ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 4.1. Size:397K  semihow
 hcs80r1k2s.pdf

HCS80R1K2ST HCS80R1K2ST

Sep 2020HCS80R1K2S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 6.1. Size:399K  semihow
 hcs80r1k4st.pdf

HCS80R1K2ST HCS80R1K2ST

Sep 2020HCS80R1K4ST800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 6.2. Size:398K  semihow
 hcs80r1k4s.pdf

HCS80R1K2ST HCS80R1K2ST

Sep 2020HCS80R1K4S800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Sw

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FCU600N65S3R0 | KIA2300

 

 
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