HCT70R910 Datasheet and Replacement
Type Designator: HCT70R910
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.94 Ohm
Package: SOT223
HCT70R910 substitution
HCT70R910 Datasheet (PDF)
hct70r910.pdf

March 2020HCT70R910 700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.94 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplication Package & Internal Circuit Switch Mode Powe
hct70r1k1.pdf

August 2020HCT70R1K1 700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.1 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplication Package & Internal Circuit Switch Mode Power
hct7000m hct7000mtxv.pdf

Product Bulletin HCT7000MJanuary 1996N-Channel Enhancement Mode MOS TransistorType HCT7000M, HCT7000MTX, HCT7000MTXVFeatures Absolute Maximum RatingsDrain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V200mA IDGate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Datasheet: HCS80R1K4S , HCS80R1K4ST , HCS90R1K0S , HCS90R1K6S , HCS90R300S , HCS90R450S , HCS90R800S , HCT70R1K1 , AON7410 , HCT80R850 , HCT90R1K4 , HCU60R260 , HCU60R580 , HCU65R1K0 , HCU65R450 , HCU70R360 , HCU70R600 .
History: PHB55N03LT
Keywords - HCT70R910 MOSFET datasheet
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History: PHB55N03LT



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