HCT70R910 Datasheet. Specs and Replacement
Type Designator: HCT70R910 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.94 Ohm
Package: SOT223
HCT70R910 substitution
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HCT70R910 datasheet
hct70r910.pdf
March 2020 HCT70R910 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 5.2 A Excellent stability and uniformity RDS(on), max 0.94 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit Switch Mode Powe... See More ⇒
hct70r1k1.pdf
August 2020 HCT70R1K1 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.1 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.3 nC Application Package & Internal Circuit Switch Mode Power... See More ⇒
hct7000m hct7000mtxv.pdf
Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V 200mA I D Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... See More ⇒
Detailed specifications: HCS80R1K4S, HCS80R1K4ST, HCS90R1K0S, HCS90R1K6S, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, SPP20N60C3, HCT80R850, HCT90R1K4, HCU60R260, HCU60R580, HCU65R1K0, HCU65R450, HCU70R360, HCU70R600
Keywords - HCT70R910 MOSFET specs
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