HCU60R260 Datasheet. Specs and Replacement

Type Designator: HCU60R260  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 118 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: IPAK

HCU60R260 substitution

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HCU60R260 datasheet

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 hcu60r260.pdf pdf_icon

HCU60R260

Sep 2020 HCU60R260 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 14.4 A Excellent stability and uniformity RDS(on), max 0.26 100% Avalanche Tested Built-in ESD Diode Qg, Typ 31 nC Application Package & Internal Circuit I-PAK SYMBOL Switc... See More ⇒

 8.1. Size:411K  semihow
 hcu60r580.pdf pdf_icon

HCU60R260

March 2021 HCU60R580 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 7.0 A Excellent stability and uniformity RDS(on), max 0.58 100% Avalanche Tested Built-in ESD Diode Qg, Typ 14 nC Application Package & Internal Circuit I-PAK SYMBOL Swit... See More ⇒

Detailed specifications: HCS90R1K6S, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850, HCT90R1K4, 13N50, HCU60R580, HCU65R1K0, HCU65R450, HCU70R360, HCU70R600, HCU70R710, HCU70R910, HCU80R1K2

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.