All MOSFET. HCU65R1K0 Datasheet

 

HCU65R1K0 Datasheet and Replacement


   Type Designator: HCU65R1K0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.3 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: IPAK
 

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HCU65R1K0 Datasheet (PDF)

 ..1. Size:409K  semihow
 hcu65r1k0.pdf pdf_icon

HCU65R1K0

April 2020HCU65R1K0650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 4.8 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

 8.1. Size:431K  semihow
 hcu65r450.pdf pdf_icon

HCU65R1K0

Sep 2020HCU65R450650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HCT90R1K4

Keywords - HCU65R1K0 MOSFET datasheet

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