HCU65R450 Datasheet. Specs and Replacement

Type Designator: HCU65R450  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 84 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: IPAK

HCU65R450 substitution

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HCU65R450 datasheet

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HCU65R450

Sep 2020 HCU65R450 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 9.2 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 20 nC Application Package & Internal Circuit I-PAK SYMBOL Switch... See More ⇒

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HCU65R450

April 2020 HCU65R1K0 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 4.8 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.3 nC Application Package & Internal Circuit I-PAK SYMBOL Swit... See More ⇒

Detailed specifications: HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850, HCT90R1K4, HCU60R260, HCU60R580, HCU65R1K0, 5N65, HCU70R360, HCU70R600, HCU70R710, HCU70R910, HCU80R1K2, HCU80R1K4, HCU90R1K0, HCU90R1K4

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