HCU65R450 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCU65R450
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: IPAK
HCU65R450 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCU65R450 Datasheet (PDF)
hcu65r450.pdf
Sep 2020HCU65R450650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switch
hcu65r1k0.pdf
April 2020HCU65R1K0650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 4.8 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
