All MOSFET. HCU65R450 Datasheet

 

HCU65R450 Datasheet and Replacement


   Type Designator: HCU65R450
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: IPAK
 

 HCU65R450 substitution

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HCU65R450 Datasheet (PDF)

 ..1. Size:431K  semihow
 hcu65r450.pdf pdf_icon

HCU65R450

Sep 2020HCU65R450650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switch

 8.1. Size:409K  semihow
 hcu65r1k0.pdf pdf_icon

HCU65R450

April 2020HCU65R1K0650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 4.8 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

Datasheet: HCS90R800S , HCT70R1K1 , HCT70R910 , HCT80R850 , HCT90R1K4 , HCU60R260 , HCU60R580 , HCU65R1K0 , 4435 , HCU70R360 , HCU70R600 , HCU70R710 , HCU70R910 , HCU80R1K2 , HCU80R1K4 , HCU90R1K0 , HCU90R1K4 .

History: IRLIZ34A

Keywords - HCU65R450 MOSFET datasheet

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