All MOSFET. HCU70R360 Datasheet

 

HCU70R360 Datasheet and Replacement


   Type Designator: HCU70R360
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: IPAK
 

 HCU70R360 substitution

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HCU70R360 Datasheet (PDF)

 ..1. Size:412K  semihow
 hcu70r360.pdf pdf_icon

HCU70R360

August 2020HCU70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 11.6 A Excellent stability and uniformityRDS(on), max 0.36 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Sw

 8.1. Size:380K  semihow
 hcu70r600.pdf pdf_icon

HCU70R360

June 2019HCU70R600700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 7.3 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switch

 8.2. Size:431K  semihow
 hcu70r910.pdf pdf_icon

HCU70R360

April 2020HCU70R910700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.91 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Sw

 8.3. Size:411K  semihow
 hcu70r710.pdf pdf_icon

HCU70R360

April 2020HCU70R710700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 6.4 A Excellent stability and uniformityRDS(on), max 0.71 100% Avalanche Tested Built-in ESD DiodeQg, Typ 14 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

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Datasheet: HCT70R1K1 , HCT70R910 , HCT80R850 , HCT90R1K4 , HCU60R260 , HCU60R580 , HCU65R1K0 , HCU65R450 , IRF1010E , HCU70R600 , HCU70R710 , HCU70R910 , HCU80R1K2 , HCU80R1K4 , HCU90R1K0 , HCU90R1K4 , HCW60R150 .

History: PSMN2R2-30YLC | AM30P10-80D | APT30M85SVRG | SPP15P10PH

Keywords - HCU70R360 MOSFET datasheet

 HCU70R360 cross reference
 HCU70R360 equivalent finder
 HCU70R360 lookup
 HCU70R360 substitution
 HCU70R360 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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