HCU70R360 - параметры транзистора MOSFET, его аналоги, datasheet

HCU70R360 Datasheet (PDF)

..1. Size:412K semihow
hcu70r360.pdf pdf_icon

August 2020HCU70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 11.6 A Excellent stability and uniformityRDS(on), max 0.36 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Sw

8.1. Size:380K semihow
hcu70r600.pdf pdf_icon

June 2019HCU70R600700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 7.3 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switch

8.2. Size:431K semihow
hcu70r910.pdf pdf_icon

April 2020HCU70R910700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.91 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Sw

8.3. Size:411K semihow
hcu70r710.pdf pdf_icon

April 2020HCU70R710700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 6.4 A Excellent stability and uniformityRDS(on), max 0.71 100% Avalanche Tested Built-in ESD DiodeQg, Typ 14 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

Другие MOSFET... HCT70R1K1 , HCT70R910 , HCT80R850 , HCT90R1K4 , HCU60R260 , HCU60R580 , HCU65R1K0 , HCU65R450 , IRF530 , HCU70R600 , HCU70R710 , HCU70R910 , HCU80R1K2 , HCU80R1K4 , HCU90R1K0 , HCU90R1K4 , HCW60R150 .