HCU70R710 Datasheet. Specs and Replacement

Type Designator: HCU70R710  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.71 Ohm

Package: IPAK

HCU70R710 substitution

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HCU70R710 datasheet

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 hcu70r710.pdf pdf_icon

HCU70R710

April 2020 HCU70R710 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 6.4 A Excellent stability and uniformity RDS(on), max 0.71 100% Avalanche Tested Built-in ESD Diode Qg, Typ 14 nC Application Package & Internal Circuit I-PAK SYMBOL Swit... See More ⇒

 8.1. Size:380K  semihow
 hcu70r600.pdf pdf_icon

HCU70R710

June 2019 HCU70R600 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 7.3 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit I-PAK SYMBOL Switch... See More ⇒

 8.2. Size:431K  semihow
 hcu70r910.pdf pdf_icon

HCU70R710

April 2020 HCU70R910 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 5.2 A Excellent stability and uniformity RDS(on), max 0.91 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit I-PAK SYMBOL Sw... See More ⇒

 8.3. Size:412K  semihow
 hcu70r360.pdf pdf_icon

HCU70R710

August 2020 HCU70R360 700V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 750 V Extremely low switching loss ID 11.6 A Excellent stability and uniformity RDS(on), max 0.36 100% Avalanche Tested Built-in ESD Diode Qg, Typ 27 nC Application Package & Internal Circuit I-PAK SYMBOL Sw... See More ⇒

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Detailed specifications: HCT80R850, HCT90R1K4, HCU60R260, HCU60R580, HCU65R1K0, HCU65R450, HCU70R360, HCU70R600, AON6380, HCU70R910, HCU80R1K2, HCU80R1K4, HCU90R1K0, HCU90R1K4, HCW60R150, HCW60R190, HCW60R290

Keywords - HCU70R710 MOSFET specs

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