All MOSFET. HCU80R1K2 Datasheet

 

HCU80R1K2 Datasheet and Replacement


   Type Designator: HCU80R1K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.3 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: IPAK
 

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HCU80R1K2 Datasheet (PDF)

 ..1. Size:410K  semihow
 hcu80r1k2.pdf pdf_icon

HCU80R1K2

Sep 2020HCU80R1K2800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.5 A Excellent stability and uniformityRDS(on), max 1.2 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switc

 6.1. Size:409K  semihow
 hcu80r1k4.pdf pdf_icon

HCU80R1K2

Sep 2020HCU80R1K4800V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 850 V Extremely low switching lossID 4.0 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switch

Datasheet: HCU60R260 , HCU60R580 , HCU65R1K0 , HCU65R450 , HCU70R360 , HCU70R600 , HCU70R710 , HCU70R910 , IRLB4132 , HCU80R1K4 , HCU90R1K0 , HCU90R1K4 , HCW60R150 , HCW60R190 , HCW60R290 , HCW65R210 , HCW65R320 .

Keywords - HCU80R1K2 MOSFET datasheet

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