HCU80R1K4 Datasheet. Specs and Replacement

Type Designator: HCU80R1K4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: IPAK

HCU80R1K4 substitution

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HCU80R1K4 datasheet

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 hcu80r1k4.pdf pdf_icon

HCU80R1K4

Sep 2020 HCU80R1K4 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.0 A Excellent stability and uniformity RDS(on), max 1.4 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit I-PAK SYMBOL Switch... See More ⇒

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HCU80R1K4

Sep 2020 HCU80R1K2 800V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 850 V Extremely low switching loss ID 4.5 A Excellent stability and uniformity RDS(on), max 1.2 100% Avalanche Tested Built-in ESD Diode Qg, Typ 10.3 nC Application Package & Internal Circuit I-PAK SYMBOL Switc... See More ⇒

Detailed specifications: HCU60R580, HCU65R1K0, HCU65R450, HCU70R360, HCU70R600, HCU70R710, HCU70R910, HCU80R1K2, NCEP15T14, HCU90R1K0, HCU90R1K4, HCW60R150, HCW60R190, HCW60R290, HCW65R210, HCW65R320, HFA20N50U

Keywords - HCU80R1K4 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.