All MOSFET. HCU90R1K0 Datasheet

 

HCU90R1K0 Datasheet and Replacement


   Type Designator: HCU90R1K0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 13.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: IPAK
 

 HCU90R1K0 substitution

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HCU90R1K0 Datasheet (PDF)

 ..1. Size:442K  semihow
 hcu90r1k0.pdf pdf_icon

HCU90R1K0

Apr. 2023HCU90R1K0900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Swit

 6.1. Size:410K  semihow
 hcu90r1k4.pdf pdf_icon

HCU90R1K0

Nov 2021HCU90R1K4900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 4.2 A Excellent stability and uniformityRDS(on), max 1.4 100% Avalanche Tested Built-in ESD DiodeQg, Typ 10.3 nCApplicationPackage & Internal CircuitI-PAK SYMBOL Switc

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: ZVN2120GTC

Keywords - HCU90R1K0 MOSFET datasheet

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