All MOSFET. HCW65R320 Datasheet

 

HCW65R320 Datasheet and Replacement


   Type Designator: HCW65R320
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO263
 

 HCW65R320 substitution

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HCW65R320 Datasheet (PDF)

 ..1. Size:626K  semihow
 hcw65r320.pdf pdf_icon

HCW65R320

Nov 2020HCW65R320650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 12.3 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitTO-263 SYMBOL Swit

 8.1. Size:646K  semihow
 hcw65r210.pdf pdf_icon

HCW65R320

Nov 2020HCW65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 16.8 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-263 SYMBOL Swit

Datasheet: HCU80R1K2 , HCU80R1K4 , HCU90R1K0 , HCU90R1K4 , HCW60R150 , HCW60R190 , HCW60R290 , HCW65R210 , 10N65 , HFA20N50U , HFA24N50G , HFB1N60F , HFC2N60U , HFD1N60F , HFD1N60SA , HFD2N60F , HFD5N60F .

History: NCE3095G

Keywords - HCW65R320 MOSFET datasheet

 HCW65R320 cross reference
 HCW65R320 equivalent finder
 HCW65R320 lookup
 HCW65R320 substitution
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