HFA20N50U Datasheet. Specs and Replacement
Type Designator: HFA20N50U 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.265 Ohm
Package: TO247
HFA20N50U substitution
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HFA20N50U datasheet
hfa20n50u.pdf
May 2014 BVDSS = 500 V RDS(on) typ HFA20N50U ID = 20 A 500V N-Channel MOSFET TO-247 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 58 nC (Typ.) Extended Safe Operating Area L... See More ⇒
Detailed specifications: HCU80R1K4, HCU90R1K0, HCU90R1K4, HCW60R150, HCW60R190, HCW60R290, HCW65R210, HCW65R320, IRFP250, HFA24N50G, HFB1N60F, HFC2N60U, HFD1N60F, HFD1N60SA, HFD2N60F, HFD5N60F, HFD5N65SA
Keywords - HFA20N50U MOSFET specs
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