All MOSFET. HFA24N50G Datasheet

 

HFA24N50G Datasheet and Replacement


   Type Designator: HFA24N50G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: TO247
 

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HFA24N50G Datasheet (PDF)

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HFA24N50G

July 2015BVDSS = 500 VRDS(on) typ HFA24N50GID = 24 A500V N-Channel MOSFETTO-247FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lo

Datasheet: HCU90R1K0 , HCU90R1K4 , HCW60R150 , HCW60R190 , HCW60R290 , HCW65R210 , HCW65R320 , HFA20N50U , P0903BDG , HFB1N60F , HFC2N60U , HFD1N60F , HFD1N60SA , HFD2N60F , HFD5N60F , HFD5N65SA , HFH9N90A .

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