HFA24N50G MOSFET. Datasheet pdf. Equivalent
Type Designator: HFA24N50G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO247
HFA24N50G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFA24N50G Datasheet (PDF)
..1. Size:184K semihow
hfa24n50g.pdf
hfa24n50g.pdf
July 2015BVDSS = 500 VRDS(on) typ HFA24N50GID = 24 A500V N-Channel MOSFETTO-247FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lo
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