HFC2N60U Datasheet. Specs and Replacement

Type Designator: HFC2N60U  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO126

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HFC2N60U datasheet

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HFC2N60U

November 2014 BVDSS = 600 V RDS(on) typ = HFC2N60U ID = 2 A 600V N-Channel MOSFET TO-126 FEATURES Originative New Design 1 Superior Avalanche Rugged Technology 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Typ.) Extended Safe Operating Area L... See More ⇒

Detailed specifications: HCW60R150, HCW60R190, HCW60R290, HCW65R210, HCW65R320, HFA20N50U, HFA24N50G, HFB1N60F, 10N65, HFD1N60F, HFD1N60SA, HFD2N60F, HFD5N60F, HFD5N65SA, HFH9N90A, HFI50N06A, HFI5N50S

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.