HFC2N60U Datasheet and Replacement
Type Designator: HFC2N60U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 38 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO126
HFC2N60U substitution
HFC2N60U Datasheet (PDF)
hfc2n60u.pdf
November 2014BVDSS = 600 VRDS(on) typ = HFC2N60U ID = 2 A600V N-Channel MOSFETTO-126FEATURES Originative New Design1 Superior Avalanche Rugged Technology23 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area L
Datasheet: HCW60R150 , HCW60R190 , HCW60R290 , HCW65R210 , HCW65R320 , HFA20N50U , HFA24N50G , HFB1N60F , 10N65 , HFD1N60F , HFD1N60SA , HFD2N60F , HFD5N60F , HFD5N65SA , HFH9N90A , HFI50N06A , HFI5N50S .
History: STP4NK50ZFP
Keywords - HFC2N60U MOSFET datasheet
HFC2N60U cross reference
HFC2N60U equivalent finder
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HFC2N60U substitution
HFC2N60U replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STP4NK50ZFP
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