All MOSFET. HFI50N06A Datasheet

 

HFI50N06A Datasheet and Replacement


   Type Designator: HFI50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO262
 

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HFI50N06A Datasheet (PDF)

 ..1. Size:418K  semihow
 hfi50n06a hfw50n06a.pdf pdf_icon

HFI50N06A

Oct 2016HFI50N06A / HFW50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFI50N06A HFW50N06ASymbolTO-262 TO-263DS

 6.1. Size:237K  semihow
 hfi50n06 hfw50n06.pdf pdf_icon

HFI50N06A

Nov 2009BVDSS = 60 VRDS(on) = 18 mHFW50N06 / HFI50N06ID = 50 A60V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW50N06 HFI50N06 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operati

Datasheet: HFB1N60F , HFC2N60U , HFD1N60F , HFD1N60SA , HFD2N60F , HFD5N60F , HFD5N65SA , HFH9N90A , CS150N03A8 , HFI5N50S , HFI5N60S , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , HFP830F .

History: KDS4470 | AP9962GH | FX20ASJ-06

Keywords - HFI50N06A MOSFET datasheet

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