HFI50N06A Datasheet. Specs and Replacement

Type Designator: HFI50N06A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 27 nC

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 445 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO262

HFI50N06A substitution

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HFI50N06A datasheet

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HFI50N06A

Oct 2016 HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFI50N06A HFW50N06A Symbol TO-262 TO-263 D S ... See More ⇒

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HFI50N06A

Nov 2009 BVDSS = 60 V RDS(on) = 18 m HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW50N06 HFI50N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operati... See More ⇒

Detailed specifications: HFB1N60F, HFC2N60U, HFD1N60F, HFD1N60SA, HFD2N60F, HFD5N60F, HFD5N65SA, HFH9N90A, IRF520, HFI5N50S, HFI5N60S, HFP2N60F, HFP4N60F, HFP50N06A, HFP5N60F, HFP730F, HFP830F

Keywords - HFI50N06A MOSFET specs

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