HFI5N50S MOSFET Datasheet: N-Ch, 500V, 5A. Full specification with pinout and replacement list

HFI5N50S Specs and Replacement

   Type Designator: HFI5N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: I2PAK

HFI5N50S substitution

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HFI5N50S datasheet

..1. Size:204K semihow
hfw5n50s hfi5n50s.pdf pdf_icon

June 2009 BVDSS = 500 V RDS(on) typ = 1.2 HFW5N50S / HFI5N50S ID = 5.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N50S HFI5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Extended Saf... See More ⇒

9.1. Size:175K semihow
hfw5n60s hfi5n60s.pdf pdf_icon

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Saf... See More ⇒

Detailed specifications: HFC2N60U , HFD1N60F , HFD1N60SA , HFD2N60F , HFD5N60F , HFD5N65SA , HFH9N90A , HFI50N06A , IRF2807 , HFI5N60S , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , HFP830F , HFS10N65JS .