All MOSFET. HFI5N50S Datasheet

 

HFI5N50S Datasheet and Replacement


   Type Designator: HFI5N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15.5 nC
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: I2PAK
 

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HFI5N50S Datasheet (PDF)

 ..1. Size:204K  semihow
 hfw5n50s hfi5n50s.pdf pdf_icon

HFI5N50S

June 2009BVDSS = 500 VRDS(on) typ = 1.2 HFW5N50S / HFI5N50SID = 5.0 A500V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N50S HFI5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Saf

 9.1. Size:175K  semihow
 hfw5n60s hfi5n60s.pdf pdf_icon

HFI5N50S

Sep 2009BVDSS = 600 VRDS(on) typ HFW5N60S / HFI5N60SID = 4.5 A600V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New DesignHFW5N60S HFI5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CS630A3H | SHDC220212

Keywords - HFI5N50S MOSFET datasheet

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