HFI5N50S Datasheet. Specs and Replacement

Type Designator: HFI5N50S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: I2PAK

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HFI5N50S datasheet

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 hfw5n50s hfi5n50s.pdf pdf_icon

HFI5N50S

June 2009 BVDSS = 500 V RDS(on) typ = 1.2 HFW5N50S / HFI5N50S ID = 5.0 A 500V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N50S HFI5N50S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Extended Saf... See More ⇒

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 hfw5n60s hfi5n60s.pdf pdf_icon

HFI5N50S

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Saf... See More ⇒

Detailed specifications: HFC2N60U, HFD1N60F, HFD1N60SA, HFD2N60F, HFD5N60F, HFD5N65SA, HFH9N90A, HFI50N06A, K4145, HFI5N60S, HFP2N60F, HFP4N60F, HFP50N06A, HFP5N60F, HFP730F, HFP830F, HFS10N65JS

Keywords - HFI5N50S MOSFET specs

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