HFP4N60F Datasheet. Specs and Replacement

Type Designator: HFP4N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: TO220

HFP4N60F substitution

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HFP4N60F datasheet

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 hfp4n60f hfs4n60f.pdf pdf_icon

HFP4N60F

Oct 2016 HFP4N60F / HFS4N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC RoHS Compliant HFP4N60F HFS4N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

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HFP4N60F

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 hfp4n65.pdf pdf_icon

HFP4N60F

Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan... See More ⇒

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HFP4N60F

July 2005 BVDSS = 500 V RDS(on) typ HFP4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON... See More ⇒

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Detailed specifications: HFD2N60F, HFD5N60F, HFD5N65SA, HFH9N90A, HFI50N06A, HFI5N50S, HFI5N60S, HFP2N60F, 2N60, HFP50N06A, HFP5N60F, HFP730F, HFP830F, HFS10N65JS, HFS10N80A, HFS12N65JS, HFS12N65SA

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