Справочник MOSFET. HFP4N60F

 

HFP4N60F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HFP4N60F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.2 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HFP4N60F

 

 

HFP4N60F Datasheet (PDF)

 ..1. Size:406K  semihow
 hfp4n60f hfs4n60f.pdf

HFP4N60F HFP4N60F

Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 7.1. Size:208K  shantou-huashan
 hfp4n60.pdf

HFP4N60F HFP4N60F

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP4N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25

 8.1. Size:818K  shantou-huashan
 hfp4n65.pdf

HFP4N60F HFP4N60F

Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220 They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

 9.1. Size:239K  semihow
 hfp4n50.pdf

HFP4N60F HFP4N60F

July 2005BVDSS = 500 VRDS(on) typ HFP4N50ID = 3.4 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON

 9.2. Size:202K  semihow
 hfp4n90.pdf

HFP4N60F HFP4N60F

March 2014BVDSS = 900 VRDS(on) typ HFP4N90ID = 4.0 A900V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Low

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