All MOSFET. HFP50N06A Datasheet

 

HFP50N06A Datasheet and Replacement


   Type Designator: HFP50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 27 nC
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220
 

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HFP50N06A Datasheet (PDF)

 ..1. Size:368K  semihow
 hfp50n06a hfs50n06a.pdf pdf_icon

HFP50N06A

Oct 2016HFP50N06A / HFS50N06A60V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 50 A Excellent Switching CharacteristicsRDS(on), Typ 18 100% Avalanche TestedQg, Typ 27 nC RoHS CompliantHFP50N06A HFS50N06ASymbolTO-220 TO-220FSS

 6.1. Size:292K  shantou-huashan
 hfp50n06.pdf pdf_icon

HFP50N06A

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~1751G Tj Operating Junction Temperature 1502D PD Allowable Power Dissipation

 6.2. Size:617K  shantou-huashan
 hfp50n06v.pdf pdf_icon

HFP50N06A

Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06VN-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. DC/DC converters Low Power Switching mode power appliances. Other switching applications. 1- G 2-D 3-S Features 50A, 60V(See Note), RDS(on)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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