HFP830F Datasheet. Specs and Replacement

Type Designator: HFP830F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220

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HFP830F datasheet

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 hfp830f hfs830f.pdf pdf_icon

HFP830F

May 2016 HFP830F / HFS830F 500V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 500 V Very Low Intrinsic Capacitances ID 5 A Excellent Switching Characteristics RDS(on), Typ 1.2 100% Avalanche Tested Qg, Typ 12 nC RoHS Compliant HFP830F HFS830F Symbol TO-220 TO-220F S S D D G G Absolute Ma... See More ⇒

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HFP830F

Shantou Huashan Electronic Devices Co.,Ltd. HFP830 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half b... See More ⇒

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HFP830F

June 2005 BVDSS = 500 V RDS(on) typ HFP830 ID = 4.5 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)... See More ⇒

Detailed specifications: HFI50N06A, HFI5N50S, HFI5N60S, HFP2N60F, HFP4N60F, HFP50N06A, HFP5N60F, HFP730F, 60N06, HFS10N65JS, HFS10N80A, HFS12N65JS, HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS, HFS3N80A

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