HFP830F Datasheet and Replacement
Type Designator: HFP830F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
HFP830F substitution
HFP830F Datasheet (PDF)
hfp830f hfs830f.pdf

May 2016 HFP830F / HFS830F 500V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 500 V Very Low Intrinsic Capacitances ID 5 A Excellent Switching Characteristics RDS(on), Typ 1.2 100% Avalanche Tested Qg, Typ 12 nC RoHS Compliant HFP830F HFS830F Symbol TO-220 TO-220F S S D D G G Absolute Ma
hfp830.pdf

Shantou Huashan Electronic Devices Co.,Ltd. HFP830 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half b
hfp830.pdf

June 2005BVDSS = 500 VRDS(on) typ HFP830ID = 4.5 A500V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
Datasheet: HFI50N06A , HFI5N50S , HFI5N60S , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , RU6888R , HFS10N65JS , HFS10N80A , HFS12N65JS , HFS12N65SA , HFS18N50UT , HFS2N60F , HFS2N60FS , HFS3N80A .
Keywords - HFP830F MOSFET datasheet
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History: VS4612GP | FX20VSJ-3



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