HFS2N60FS PDF and Equivalents Search

 

HFS2N60FS PDF Specs and Replacement


   Type Designator: HFS2N60FS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO220FS
 

 HFS2N60FS substitution

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HFS2N60FS PDF Specs

 ..1. Size:356K  semihow
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HFS2N60FS

Oct 2016 HFS2N60FS 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC Single Gauge Package TO-220FS Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Paramete... See More ⇒

 6.1. Size:391K  semihow
hfp2n60f hfs2n60f.pdf pdf_icon

HFS2N60FS

Oct 2016 HFP2N60F / HFS2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFP2N60F HFS2N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

 7.1. Size:150K  semihow
hfs2n60.pdf pdf_icon

HFS2N60FS

July 2005 BVDSS = 600 V RDS(on) typ HFS2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS... See More ⇒

 7.2. Size:163K  semihow
hfs2n60s.pdf pdf_icon

HFS2N60FS

March 2014 BVDSS = 600 V RDS(on) typ HFS2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

Detailed specifications: HFP730F , HFP830F , HFS10N65JS , HFS10N80A , HFS12N65JS , HFS12N65SA , HFS18N50UT , HFS2N60F , IRF830 , HFS3N80A , HFS4N60F , HFS4N60FS , HFS50N06A , HFS5N60F , HFS5N65JS , HFS5N65SA , HFS730F .

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Keywords - HFS2N60FS MOSFET specs

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 HFS2N60FS equivalent finder
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