All MOSFET. HFS4N60FS Datasheet

 

HFS4N60FS Datasheet and Replacement


   Type Designator: HFS4N60FS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO220FS
 

 HFS4N60FS substitution

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HFS4N60FS Datasheet (PDF)

 ..1. Size:369K  semihow
 hfs4n60fs.pdf pdf_icon

HFS4N60FS

Oct 2016HFS4N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC Single Gauge PackageTO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter

 6.1. Size:406K  semihow
 hfp4n60f hfs4n60f.pdf pdf_icon

HFS4N60FS

Oct 2016HFP4N60F / HFS4N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC RoHS CompliantHFP4N60F HFS4N60FSymbolTO-220 TO-220FSSDDGGAbsolute Maximum Ratings TC=25 unles

 7.1. Size:177K  semihow
 hfs4n60.pdf pdf_icon

HFS4N60FS

July 2005BVDSS = 600 VRDS(on) typ HFS4N60ID = 4.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(

 9.1. Size:236K  semihow
 hfs4n50.pdf pdf_icon

HFS4N60FS

July 2005BVDSS = 500 VRDS(on) typ HFS4N50ID = 3.4 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lo

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Datasheet: HFS10N80A , HFS12N65JS , HFS12N65SA , HFS18N50UT , HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , IRF520 , HFS50N06A , HFS5N60F , HFS5N65JS , HFS5N65SA , HFS730F , HFS730S , HFS7N80A , HFS830F .

Keywords - HFS4N60FS MOSFET datasheet

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