HFS4N60FS Datasheet. Specs and Replacement

Type Designator: HFS4N60FS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: TO220FS

HFS4N60FS substitution

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HFS4N60FS datasheet

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 hfs4n60fs.pdf pdf_icon

HFS4N60FS

Oct 2016 HFS4N60FS 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC Single Gauge Package TO-220FS Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter... See More ⇒

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 hfp4n60f hfs4n60f.pdf pdf_icon

HFS4N60FS

Oct 2016 HFP4N60F / HFS4N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 4A Excellent Switching Characteristics RDS(on), Typ 2.6 100% Avalanche Tested Qg, Typ 8.5 nC RoHS Compliant HFP4N60F HFS4N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒

 7.1. Size:177K  semihow
 hfs4n60.pdf pdf_icon

HFS4N60FS

July 2005 BVDSS = 600 V RDS(on) typ HFS4N60 ID = 4.0 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

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 hfs4n50.pdf pdf_icon

HFS4N60FS

July 2005 BVDSS = 500 V RDS(on) typ HFS4N50 ID = 3.4 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 13 nC (Typ.) Extended Safe Operating Area Lo... See More ⇒

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Detailed specifications: HFS10N80A, HFS12N65JS, HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS, HFS3N80A, HFS4N60F, IRFB7545, HFS50N06A, HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, HFS730S, HFS7N80A, HFS830F

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.