HFS5N65JS Datasheet. Specs and Replacement

Type Designator: HFS5N65JS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.7 nS

Cossⓘ - Output Capacitance: 57.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO220FS

HFS5N65JS substitution

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HFS5N65JS datasheet

 ..1. Size:598K  semihow
 hfs5n65js.pdf pdf_icon

HFS5N65JS

Mar. 2023 HFS5N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 4.0 A Excellent Switching Characteristics RDS(on), Typ 2.26 100% Avalanche Tested Qg, Typ 12.7 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum... See More ⇒

 7.1. Size:792K  semihow
 hfs5n65sa.pdf pdf_icon

HFS5N65JS

Dec. 2021 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65SA ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 14.2 nC (Typ.) Extended Safe Op... See More ⇒

 7.2. Size:315K  semihow
 hfs5n65u.pdf pdf_icon

HFS5N65JS

March 2013 BVDSS = 650 V RDS(on) typ HFS5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 7.3. Size:202K  semihow
 hfs5n65s.pdf pdf_icon

HFS5N65JS

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Unrivalled Gate Charge 10 5 nC (Typ ) ... See More ⇒

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Detailed specifications: HFS18N50UT, HFS2N60F, HFS2N60FS, HFS3N80A, HFS4N60F, HFS4N60FS, HFS50N06A, HFS5N60F, EMB04N03H, HFS5N65SA, HFS730F, HFS730S, HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA

Keywords - HFS5N65JS MOSFET specs

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