HFS8N65JS Datasheet. Specs and Replacement

Type Designator: HFS8N65JS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.1 nS

Cossⓘ - Output Capacitance: 99.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220FS

HFS8N65JS substitution

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HFS8N65JS datasheet

 ..1. Size:596K  semihow
 hfs8n65js.pdf pdf_icon

HFS8N65JS

Mar. 2023 HFS8N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 7.2 A Excellent Switching Characteristics RDS(on), Typ 1.04 100% Avalanche Tested Qg, Typ 25.3 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum... See More ⇒

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 hfs8n65u.pdf pdf_icon

HFS8N65JS

March 2013 BVDSS = 650 V RDS(on) typ HFS8N65U ID = 7.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

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 hfs8n65s.pdf pdf_icon

HFS8N65JS

Sep 2009 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 22 nC (Typ.) Unrivalled Gate Charge 22 nC (Typ ) E... See More ⇒

 7.3. Size:736K  semihow
 hfs8n65sa.pdf pdf_icon

HFS8N65JS

August 2022 BVDSS = 650 V RDS(on) typ = 1.16 HFS8N65SA ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 21 nC (Typ.) Extended Safe O... See More ⇒

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Detailed specifications: HFS5N60F, HFS5N65JS, HFS5N65SA, HFS730F, HFS730S, HFS7N80A, HFS830F, HFS8N60UA, AO4468, HFS8N65SA, HFS9N90A, HFT1N60F, HFU1N60F, HFU1N60S, HFU1N60SA, HFU2N60F, HFU2N60S

Keywords - HFS8N65JS MOSFET specs

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