All MOSFET. HFS8N65JS Datasheet

 

HFS8N65JS Datasheet and Replacement


   Type Designator: HFS8N65JS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.1 nS
   Cossⓘ - Output Capacitance: 99.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220FS
 

 HFS8N65JS substitution

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HFS8N65JS Datasheet (PDF)

 ..1. Size:596K  semihow
 hfs8n65js.pdf pdf_icon

HFS8N65JS

Mar. 2023HFS8N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 7.2 A Excellent Switching CharacteristicsRDS(on), Typ 1.04 100% Avalanche TestedQg, Typ 25.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 7.1. Size:307K  semihow
 hfs8n65u.pdf pdf_icon

HFS8N65JS

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 7.2. Size:249K  semihow
 hfs8n65s.pdf pdf_icon

HFS8N65JS

Sep 2009BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Unrivalled Gate Charge : 22 nC (Typ ) E

 7.3. Size:736K  semihow
 hfs8n65sa.pdf pdf_icon

HFS8N65JS

August 2022BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SAID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 21 nC (Typ.) Extended Safe O

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Datasheet: HFS5N60F , HFS5N65JS , HFS5N65SA , HFS730F , HFS730S , HFS7N80A , HFS830F , HFS8N60UA , AO4468 , HFS8N65SA , HFS9N90A , HFT1N60F , HFU1N60F , HFU1N60S , HFU1N60SA , HFU2N60F , HFU2N60S .

History: 2SK3430-S | STP95N04

Keywords - HFS8N65JS MOSFET datasheet

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