All MOSFET. HFT1N60F Datasheet

 

HFT1N60F Datasheet and Replacement


   Type Designator: HFT1N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT223
 

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HFT1N60F Datasheet (PDF)

 ..1. Size:188K  semihow
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HFT1N60F

Oct 2016HFT1N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 1A Excellent Switching CharacteristicsRDS(on), Typ 6.5 100% Avalanche TestedQg, Typ 3.7 nC RoHS CompliantSOT-223 SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value U

 7.1. Size:302K  semihow
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HFT1N60F

Dec 2009BVDSS = 600 VRDS(on) typ HFT1N60SID = 0.2 A600V N-Channel MOSFETSOT-2232FEATURES3 Originative New Design1 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching CharacteristicsG Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lowe

Datasheet: HFS730F , HFS730S , HFS7N80A , HFS830F , HFS8N60UA , HFS8N65JS , HFS8N65SA , HFS9N90A , IRF3205 , HFU1N60F , HFU1N60S , HFU1N60SA , HFU2N60F , HFU2N60S , HFU2N60U , HFU4N50 , HFU5N40 .

History: NCE60NF055 | HSP200N02 | AP9T16GJ

Keywords - HFT1N60F MOSFET datasheet

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