HFT1N60F Datasheet. Specs and Replacement

Type Designator: HFT1N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT223

HFT1N60F substitution

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HFT1N60F datasheet

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HFT1N60F

Oct 2016 HFT1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant SOT-223 Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value U... See More ⇒

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HFT1N60F

Dec 2009 BVDSS = 600 V RDS(on) typ HFT1N60S ID = 0.2 A 600V N-Channel MOSFET SOT-223 2 FEATURES 3 Originative New Design 1 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area Lowe... See More ⇒

Detailed specifications: HFS730F, HFS730S, HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, HFS9N90A, IRF3205, HFU1N60F, HFU1N60S, HFU1N60SA, HFU2N60F, HFU2N60S, HFU2N60U, HFU4N50, HFU5N40

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs