HFU2N60S MOSFET. Datasheet pdf. Equivalent
Type Designator: HFU2N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 37 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: IPAK
HFU2N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFU2N60S Datasheet (PDF)
hfd2n60s hfu2n60s.pdf
March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC
hfu2n60.pdf
N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU2N60 APPLICATIONSL TO-251 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25
hfd2n60u hfu2n60u.pdf
June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T
hfu2n60f hfd2n60f.pdf
May 2017 HFU2N60F / HFD2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2 A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFU2N60F HFD2N60F Symbol TO-251 TO-252 D S S G D G Ab
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