HFU2N60S - параметры транзистора MOSFET, его аналоги, datasheet

HFU2N60S Datasheet (PDF)

..1. Size:230K semihow
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March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC

7.1. Size:211K shantou-huashan
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N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU2N60 APPLICATIONSL TO-251 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=25

7.2. Size:381K semihow
hfd2n60u hfu2n60u.pdf pdf_icon

June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T

7.3. Size:514K semihow
hfu2n60f hfd2n60f.pdf pdf_icon

May 2017 HFU2N60F / HFD2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2 A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFU2N60F HFD2N60F Symbol TO-251 TO-252 D S S G D G Ab

Другие MOSFET... HFS8N65JS , HFS8N65SA , HFS9N90A , HFT1N60F , HFU1N60F , HFU1N60S , HFU1N60SA , HFU2N60F , IRF540N , HFU2N60U , HFU4N50 , HFU5N40 , HFU5N50S , HFU5N50U , HFU5N60F , HFU5N60S , HFU5N60U .