HRA40N08K Datasheet and Replacement
Type Designator: HRA40N08K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO247
HRA40N08K substitution
HRA40N08K Datasheet (PDF)
hra40n08k.pdf

December 2014BVDSS = 80 VRDS(on) typ = 3 HRA40N08K ID = 180 A80V N-Channel Trench MOSFETTO-247FEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 190nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3 (Typ.) @VGS=10V 100% Avalanche Tested
Datasheet: HFU5N50S , HFU5N50U , HFU5N60F , HFU5N60S , HFU5N60U , HFU5N65SA , HFW50N06A , HFW840 , IRFB4115 , HRA45N08K , HRD120N10K , HRD180N10K , HRD50N06K , HRD72N06K , HRD80N06K , HRD85N08K , HRF120N10K .
History: GSM3804 | BUK7M20-40H
Keywords - HRA40N08K MOSFET datasheet
HRA40N08K cross reference
HRA40N08K equivalent finder
HRA40N08K lookup
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History: GSM3804 | BUK7M20-40H



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