All MOSFET. HRA40N08K Datasheet

 

HRA40N08K Datasheet and Replacement


   Type Designator: HRA40N08K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO247
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HRA40N08K Datasheet (PDF)

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HRA40N08K

December 2014BVDSS = 80 VRDS(on) typ = 3 HRA40N08K ID = 180 A80V N-Channel Trench MOSFETTO-247FEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 190nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3 (Typ.) @VGS=10V 100% Avalanche Tested

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History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S

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