HRA40N08K Datasheet. Specs and Replacement

Type Designator: HRA40N08K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V

Qg ⓘ - Total Gate Charge: 190 nC

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO247

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HRA40N08K datasheet

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HRA40N08K

December 2014 BVDSS = 80 V RDS(on) typ = 3 HRA40N08K ID = 180 A 80V N-Channel Trench MOSFET TO-247 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 190nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 3 (Typ.) @VGS=10V 100% Avalanche Tested ... See More ⇒

Detailed specifications: HFU5N50S, HFU5N50U, HFU5N60F, HFU5N60S, HFU5N60U, HFU5N65SA, HFW50N06A, HFW840, IRF3710, HRA45N08K, HRD120N10K, HRD180N10K, HRD50N06K, HRD72N06K, HRD80N06K, HRD85N08K, HRF120N10K

Keywords - HRA40N08K MOSFET specs

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