HRD120N10K Datasheet. Specs and Replacement

Type Designator: HRD120N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V

Qg ⓘ - Total Gate Charge: 65 nC

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DPAK

HRD120N10K substitution

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HRD120N10K datasheet

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HRD120N10K

Sep 2015 BVDSS = 100 V RDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD120N10K HRU120N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ... See More ⇒

Detailed specifications: HFU5N60F, HFU5N60S, HFU5N60U, HFU5N65SA, HFW50N06A, HFW840, HRA40N08K, HRA45N08K, AON6414A, HRD180N10K, HRD50N06K, HRD72N06K, HRD80N06K, HRD85N08K, HRF120N10K, HRF130N06K, HRF140N06K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.