HRD180N10K MOSFET. Datasheet pdf. Equivalent
Type Designator: HRD180N10K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 133 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DPAK
HRD180N10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HRD180N10K Datasheet (PDF)
hrd180n10k hru180n10k.pdf
Sep 2015BVDSS = 100 VRDS(on) typ =15 HRD180N10K / HRU180N10K ID = 65 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD180N10K HRU180N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 85 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .