HRD72N06K Datasheet and Replacement
Type Designator: HRD72N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: DPAK
HRD72N06K substitution
HRD72N06K Datasheet (PDF)
hrd72n06k hru72n06k.pdf

Sep 2015BVDSS = 60 VRDS(on) typ HRD72N06K / HRU72N06K ID = 100 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD72N06K HRU72N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.8
Datasheet: HFU5N65SA , HFW50N06A , HFW840 , HRA40N08K , HRA45N08K , HRD120N10K , HRD180N10K , HRD50N06K , IRFB4115 , HRD80N06K , HRD85N08K , HRF120N10K , HRF130N06K , HRF140N06K , HRF85N08K , HRLD125N06K , HRLD150N10K .
History: FCB125N65S3 | KP979VC | VS3602GPMT | STP60NE06-16 | BSS84LT1 | PQ6S2JN | MMBF5103
Keywords - HRD72N06K MOSFET datasheet
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History: FCB125N65S3 | KP979VC | VS3602GPMT | STP60NE06-16 | BSS84LT1 | PQ6S2JN | MMBF5103



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