HRD80N06K Datasheet. Specs and Replacement

Type Designator: HRD80N06K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 114 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DPAK

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HRD80N06K datasheet

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HRD80N06K

Sep 2014 BVDSS = 60 V RDS(on) typ HRD80N06K / HRU80N06K ID = 114 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD80N06K HRU80N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 6.... See More ⇒

Detailed specifications: HFW50N06A, HFW840, HRA40N08K, HRA45N08K, HRD120N10K, HRD180N10K, HRD50N06K, HRD72N06K, 8205A, HRD85N08K, HRF120N10K, HRF130N06K, HRF140N06K, HRF85N08K, HRLD125N06K, HRLD150N10K, HRLD1B8N10K

Keywords - HRD80N06K MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.