HRD80N06K Datasheet and Replacement
Type Designator: HRD80N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 114 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DPAK
HRD80N06K substitution
HRD80N06K Datasheet (PDF)
hrd80n06k hru80n06k.pdf

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.
Datasheet: HFW50N06A , HFW840 , HRA40N08K , HRA45N08K , HRD120N10K , HRD180N10K , HRD50N06K , HRD72N06K , 2SK3878 , HRD85N08K , HRF120N10K , HRF130N06K , HRF140N06K , HRF85N08K , HRLD125N06K , HRLD150N10K , HRLD1B8N10K .
History: HCFL65R210
Keywords - HRD80N06K MOSFET datasheet
HRD80N06K cross reference
HRD80N06K equivalent finder
HRD80N06K lookup
HRD80N06K substitution
HRD80N06K replacement
History: HCFL65R210



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