All MOSFET. HRD80N06K Datasheet

 

HRD80N06K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HRD80N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 114 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DPAK

 HRD80N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HRD80N06K Datasheet (PDF)

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 hrd80n06k hru80n06k.pdf

HRD80N06K HRD80N06K

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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