HRLD33N03K Datasheet. Specs and Replacement

Type Designator: HRLD33N03K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: DPAK

HRLD33N03K substitution

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HRLD33N03K datasheet

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HRLD33N03K

August 2018 HRLD33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 150 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit ... See More ⇒

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HRLD33N03K

Oct 2016 BVDSS = 100 V RDS(on) typ = 30 m HRLD370N10K / HRLU370N10K ID = 25 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRLD370N10K HRLU370N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 53 nC (Typ.) Extended S... See More ⇒

Detailed specifications: HRF120N10K, HRF130N06K, HRF140N06K, HRF85N08K, HRLD125N06K, HRLD150N10K, HRLD1B8N10K, HRLD250N10K, IRF4905, HRLD370N10K, HRLD40N04K, HRLD55N03K, HRLD72N06, HRLD80N06K, HRLE320N03K, HRLF110N03K, HRLF125N06K

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