All MOSFET. HRLD33N03K Datasheet

 

HRLD33N03K Datasheet and Replacement


   Type Designator: HRLD33N03K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: DPAK
 

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HRLD33N03K Datasheet (PDF)

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HRLD33N03K

August 2018 HRLD33N03K 30V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit Low Dense Cell Design, Logic Level BVDSS 30 V Reliable and Rugged ID (Silicon Limited) 150 A Advanced Trench Process Technology RDS(on), typ @10V 2.7 m 100% UIS Tested, 100% Rg Tested RDS(on), typ @4.5V 3.2 m Application Package & Internal Circuit

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HRLD33N03K

Oct 2016 BVDSS = 100 V RDS(on) typ = 30 m HRLD370N10K / HRLU370N10K ID = 25 A 100V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRLD370N10K HRLU370N10K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 53 nC (Typ.) Extended S

Datasheet: HRF120N10K , HRF130N06K , HRF140N06K , HRF85N08K , HRLD125N06K , HRLD150N10K , HRLD1B8N10K , HRLD250N10K , IRF4905 , HRLD370N10K , HRLD40N04K , HRLD55N03K , HRLD72N06 , HRLD80N06K , HRLE320N03K , HRLF110N03K , HRLF125N06K .

History: SSM6N39TU | STB20NM60

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