All MOSFET. HRLD72N06 Datasheet

 

HRLD72N06 Datasheet and Replacement


   Type Designator: HRLD72N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 91 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 84 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 785 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: DPAK
 

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HRLD72N06 Datasheet (PDF)

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HRLD72N06

Mar 2023HRLD72N0660V N-Channel Trench MOSFETFeatures Key ParametersParameter Value Unit High Speed Power Switching, Logic LevelBVDSS 60 V Enhanced Body diode dv/dt capabilityID 84 A Enhanced Avalanche RuggednessRDS(on), max @10V 7.2 m 100% UIS Tested, 100% Rg TestedRDS(on), max @4.5V 12.5 m Lead free, Halogen FreeApplicationPackage & Internal Cir

Datasheet: HRLD125N06K , HRLD150N10K , HRLD1B8N10K , HRLD250N10K , HRLD33N03K , HRLD370N10K , HRLD40N04K , HRLD55N03K , 8205A , HRLD80N06K , HRLE320N03K , HRLF110N03K , HRLF125N06K , HRLF150N10K , HRLF180N10K , HRLF190N03K , HRLF33N03K .

History: IRFH5215PBF

Keywords - HRLD72N06 MOSFET datasheet

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